High-purity (corrosion-resistant) Al bonding wire bonds tightly to chip pads via ultrasonic welding at room temperature, avoiding electrochemical corrosion (IMC issues). Its superb ductility and conductivity handle transient currents of tens to hundreds of amperes, ensuring high reliability under automotive high voltage, high current, and thermal cycling.

Al-1%Si wire leverages solid solution strengthening to greatly enhance tensile strength and fatigue resistance. This ensures a stable loop profile even at ultra-fine diameters, making it ideal for high-density, fine-pitch ultrasonic packaging. It effectively prevents shorts in tight spaces, serving as a key interconnect for wearables and MEMS.

Copper bonding wire outperforms Al in electrical and thermal conductivity at a fraction of gold's cost, reducing heat in high-current paths. Since bare copper oxidizes easily, palladium-coated copper (PCC) is preferred. Its anti-oxidation Pd layer protects the wire, widens the process window, and improves 2nd-bond yield and overload safety.

Aluminum bonding ribbon features a rectangular cross-section. Compared to round wire, it provides a larger surface area (better skin effect, lower RF resistance) and a flat contact zone. This boosts current handling, lowers parasitic inductance and loop resistance, and maximizes heat dissipation, matching the high power density of SiC/GaN.